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電學(xué)特性
FEOL Electrical Characterization
In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on monitor wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.
FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.
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3DIC TSV and BWS TTV硅片表面形貌測(cè)量
Film Stress薄膜應(yīng)力量測(cè)儀
FEOL Electrical Characterization 電學(xué)特性
Thin wafer metrology 晶圓測(cè)量學(xué)
Film Adhesion漆膜附著力測(cè)試
FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.
電話：86-021-37018108
傳真：86-021-57656381
郵箱：info@boyuesh.com
地址：上海市松江區(qū)莘磚公路518號(hào)松江高科技園區(qū)28幢301室
